4N35, 4N36, 4N37
Optically Coupled Isolators

Circuit

Features

3500, 2500 or 1500 Volt Isolation.
High DC Current Transfer Ratio (100% min).
Low Cost Dual-In-Line Package.

Description

The 4N35, 4N36, 4N37 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings: (Ta=25�C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:

-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±3550Vpeak (4N35)
±2500Vpeak (4N36)
±1500Vpeak (4N37)

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly:

60mA
6V
3A (t p=10µs)
100mW
1.33mW/°C above 25°C


Output Transistor

Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector-Base Voltage:
Power Dissipation:
Derate Linearly:

30V
7V
70V
300mW
2.00mW/°C above 25°C


Package

Total Power Dissipation:
Derate Linearly:

400mW
3.3mW/°C above 25°C

Electro-optical Characteristics: (Ta=25�C)

INPUT

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VF

Forward Current

IF=10mA

0.8


1.5

V

IF=10mA, TA=-55°C

0.9


1.7

V

IF=10mA, TA=100°C

0.7


1.4

V

VR

Reverse Breakdown Voltage

IR=10µA

6



V

IR

Reverse Current

VR=6V



10

µA

OUTPUT

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVCEO

Collector-Emitter Voltage

IC=1mA

30



V

BVECO

Emitter-Collector Voltage

IE=100µA

7



V

BVCBO

Collector-Base Voltage

IC=100µA

70



V

ICEO

Collector-Emitter Dark Current

VCE=10V, IB=0, TA=25°C


5

50

nA

ICEO

Collector-Emitter Dark Current

VCE=30V, IB=0, TA=100°C



500

µA

ICBO

Collector-Base Dark Current

VCB=10V, IE=0



20

nA

CCE

Collector-Emitter Capacitance

VCE=10V, f=1MHz

2

10


pF

HFE


VCE=5.0V, IC=100µA

100

150



COUPLED

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

IC/IF

DC Current Transfer Ratio

IF=10mA, VCE=10V, TA=25°C

100



%

IF=10mA, VCE=10V, TA=100°C

40



%

IF=10mA, VCE=10V, TA=-55°C

40



%

VCE(SAT)


IF=10mA, IC=0.5mA, IB=0

10



%

RIO

Input-to-Output Isolation Resistance

VIO=500V, (note 1)

1E11



ohm

CIO

Capacitance Input to Output

f=1MHz (note 1)


1


pf

TR

Output Rise Time

VCC=10V, IC=2mA


3


µs

TF

Output Fall Time

RL=100ohm


3


µs


Input-Output Isolation Voltage





4N35

(Note 1)

3550



V

4N36

2500



V

4N37

1500



V