The optically coupled isolators device are consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard IC package. All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.
Data Sheet of Opto Isolator Device 4N35 Input-to-Output Isolation Voltage: ±3550Vpeak Operating Temperature: -55°C to +100°C
Input Diode Forward DC Current: 60mA Reverse DC Voltage: 6V Peak Forward Current: 3A (t p=10us) Power Dissipation: 100mW Derate Linearly: 1.33mW/°C above 25°C
Output Transistor Collector-Emitter Voltage: 30V Emitter-Collector Voltage: 7V Collector-Base Voltage: 70V Power Dissipation: 300mW Derate Linearly: 2.00mW/°C above 25°C
Total Power Dissipation: 400mW Derate Linearly: 3.3mW/°C above 25°C